FCU2250N80Z دیتاشیت

FCU2250N80Z

مشخصات دیتاشیت

نام دیتاشیت FCU2250N80Z
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FCU2250N80Z

دانلود دیتاشیت

سایر مستندات

FCU2250N80Z 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCU2250N80Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 39W
  • Total Gate Charge (Qg@Vgs): 14nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 585pF@100V
  • Continuous Drain Current (Id): 2.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@260uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.25Ω@1.3A,10V
  • Package: TO-251
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FCU2250
  • detail: N-Channel 800V 2.6A (Tc) 39W (Tc) Through Hole I-PAK

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